Browse Prior Art Database

Negative Resist Compositions

IP.com Disclosure Number: IPCOM000108814D
Original Publication Date: 1992-Jun-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 1 page(s) / 55K

Publishing Venue

IBM

Related People

Ito, H: AUTHOR [+2]

Abstract

Extremely sensitive, negative-tone resist systems are disclosed. Sensitive resist materials are needed to make high-resolution, short-wavelength lithographic technologies, such as deep UV, E-beam, and X-ray exposure techniques practical in device manufacturing. Incorporation of chemical amplification in the resist design is the most attractive and proven approach to sensitivity enhancement. The tBOC resist is such an example, whose imaging mechanism is based on acid-catalyzed deprotection of polymer pendant groups to induce a change from a nonpolar to a polar state. The potential of the polarity change mechanism has been fully explored and realized in the lithographic technology.

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Negative Resist Compositions

       Extremely sensitive, negative-tone resist systems are
disclosed.  Sensitive resist materials are needed to make
high-resolution, short-wavelength lithographic technologies, such as
deep UV, E-beam, and X-ray exposure techniques practical in device
manufacturing.  Incorporation of chemical amplification in the resist
design is the most attractive and proven approach to sensitivity
enhancement. The tBOC resist is such an example, whose imaging
mechanism is based on acid-catalyzed deprotection of polymer pendant
groups to induce a change from a nonpolar to a polar state. The
potential of the polarity change mechanism has been fully explored
and realized in the lithographic technology.

      The reverse polarity change from a polar to a nonpolar state
could provide versatile lithographic schemes.  This article describes
extremely sensitive, chemical amplification resists based on the
reverse polarity change, which is achieved by acid-catalyzed
dehydration.

      4-(2-Hydroxy-2-propyl)styrene was prepared by reacting
4-vinylphenylmagnesium chloride with acetone and subjected to radical
polymerization with a,a-azobis(isobutyronitrile) or benzoyl peroxide
in tetrahydrofuran at 60oC.  The weight-average molecular weight
ranged from 10,000 to 40,000.  The polymer is stable thermally to
200oC and then undergoes dehydration.  A resist was formulated with
the tertiary alcohol polymer and 4.75 wt% triphenylsulfonium
hexafluoroanti...