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Sensitivity Enhancement of Diazonaphthoquinone Resists

IP.com Disclosure Number: IPCOM000108826D
Original Publication Date: 1992-Jun-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 2 page(s) / 79K

Publishing Venue

IBM

Related People

Chiong, KN: AUTHOR [+2]

Abstract

A technique is described whereby the sensitivity of diazonaphthoquinone resists, as used in submicron geometries, is enhanced.

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Sensitivity Enhancement of Diazonaphthoquinone Resists

       A technique is described whereby the sensitivity of
diazonaphthoquinone resists, as used in submicron geometries, is
enhanced.

      Typically, diazonaphthoquinone resists, such as AZ resists, are
mid and near ultraviolet resists with high resolution, high
sensitivity and with a high R/Ro (dissolution rate > 10) (*).  When
used as an E-beam resist, the sensitivity is moderate and R/Ro is
only 6.  Photo- irradiation of this type of resist is mechanistically
shown in Fig. 1.  In the E-beam exposure environment, where moisture
is inadequate, pathway (b) could compete with pathway (a), which
could cause less solubilization of the exposed area.  This may
account for the low R/Ro observed in the E-beam irradiated AZ resist.
In order to obtain a high dissolution rate for the exposed area,
pathway (b) needs to be blocked, which is a reaction between the
ketene intermediate and the resin (Novolak).

      The concept described herein proposes the following: Intercept
the ketene with good nucleophiles that will form easily hydrolyzable
products in base developers, for example, R-CO2H additives and Ar-CO2
additives, pyrazoles, indazoles, triazoles, benztriazoles,
benzinidazoles and tetrazoles.  These additives must be compatible
with the resist's high melting point, low vapor pressure and low
basicity. They must not cause the PAC to degrade and must be soluble
in the resist.  Imidazole has been used as a...