Browse Prior Art Database

Magnetic Memory using Superconductor-Ferromagnet Interfaces

IP.com Disclosure Number: IPCOM000108888D
Original Publication Date: 1992-Jun-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Eigler, DM: AUTHOR

Abstract

The invention disclosed is a magnetic memory cell using ferromagnet-superconductor-ferromagnet device structures based on the injection and detection of non-equilibrium spin magnetization in the superconductor. This allows non-volatile magnetic storage of information in a very large-scale integration (VLSI) format with random access.

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Magnetic Memory using Superconductor-Ferromagnet Interfaces

      The invention disclosed is a magnetic memory cell using
ferromagnet-superconductor-ferromagnet device structures based on the
injection and detection of non-equilibrium spin magnetization in the
superconductor.  This allows non-volatile magnetic storage of
information in a very large-scale integration (VLSI) format with
random access.

      Superconductor-ferromagnet interfaces yield open-circuit
voltages comparable in magnitude to the gap voltage of the
superconductor when non-equilibrium spin magnetization is present in
the superconductor.

      By replacing the typical paramagnetic metals in a memory cell
structure with a superconductor, the voltage drop caused by the
metal's resistive properties is eliminated.  Consequently, a
ferromagnet-superconductor-ferromagnet memory cell structure allows
very compact device geometries.

      Disclosed anonymously.