Browse Prior Art Database

Electron Beam Steering in Solid-State Devices

IP.com Disclosure Number: IPCOM000108898D
Original Publication Date: 1992-Jun-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 1 page(s) / 44K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR [+3]

Abstract

Ballistic electron beams produced using split gate emitters can be controllably steered from one region of a device to another by varying the potential difference applied between the two gates forming the split gate emitter.

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This is the abbreviated version, containing approximately 92% of the total text.

Electron Beam Steering in Solid-State Devices

      Ballistic electron beams produced using split gate emitters can
be controllably steered from one region of a device to another by
varying the potential difference applied between the two gates
forming the split gate emitter.

      Devices utilizing hot, ballistic electrons promise improved
performance due to the higher speed of the electrons relative to
conventional devices.  Candidates for such devices can be made by
patterning nanostructure metal gates on GaAs/AlGaAs heterostructures.
Application of a negative bias to the gates forms potential barriers
in the two-dimensional-electron-gas (2DEG) underneath the gates.  If
the tips of the two separate, pointed, gates are patterned close
together, a "split-gate emitter" can be formed which separates
emitter and base regions of the 2DEG.  Biasing one side of the 2DEG
relative to the other results in a directed, relatively collimated,
"beam" of electrons flowing from emitter to base.  Application of a
potential difference between the two gates forming the split-gate
emitter results in the beam of electrons being bent away from the
more negatively biased gate.  Electron scattering in the base
eventually disperses the collimated beam at a distance roughly an
elastic mean free path away from the emitter.  In various device
applications, the emitted beam could be steered across the base
region into various collector regions, positioned within an elastic
mean free pa...