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Browse Prior Art Database

Optical Networks for VLSI Interconnects on Flexible GaAs Substrate

IP.com Disclosure Number: IPCOM000108918D
Original Publication Date: 1992-Jul-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 2 page(s) / 73K

Publishing Venue

IBM

Related People

Bona, GL: AUTHOR [+3]

Abstract

Disclosed is an optical bus network with laser diodes, photodiodes and waveguides integrated on a GaAs substrate where the relevant epitaxial and structural features are transferred from the rigid wafer via a lift-off process to a thin flexible MYLAR membrane. A network configuration for VLSI chip-interconnects has been disclosed in the preceding article which describes describing a folded bus topology for high-speed optical signal transmission. Optical bus networks offer lower bus driver currents, shorter bus cycle times, and reduced footprint compared to unterminated electrical buses with CMOS-driver circuits. In addition, the epitaxial lift-off and bonding of the network structure on flexible ribbon carriers allow multilayer layouts.

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Optical Networks for VLSI Interconnects on Flexible GaAs Substrate

       Disclosed is an optical bus network with laser diodes,
photodiodes and waveguides integrated on a GaAs substrate where the
relevant epitaxial and structural features are transferred from the
rigid wafer via a lift-off process to a thin flexible MYLAR membrane.
A network configuration for VLSI chip-interconnects has been
disclosed in the preceding article which describes describing a
folded bus topology for high-speed optical signal transmission.
Optical bus networks offer lower bus driver currents, shorter bus
cycle times, and reduced footprint compared to unterminated
electrical buses with CMOS-driver circuits.  In addition, the
epitaxial lift-off and bonding of the network structure on flexible
ribbon carriers allow multilayer layouts.

      A thin (N100 o) AlAs layer 5 mm - 10 mm below all relevant
epitaxial and etching features constituting the array of laser
diodes, photodiodes, and waveguides, allows epitaxial lift-off by
hydro fluoric etching (1).  GaAs films as large as several cm2 have
been lifted off and transferred to a Si carrier (1).  The figure
shows a cross-section and top-view of an AlGaAs ridge laser with
etched mirrors and self-aligned optical waveguide (2).  When operated
under reverse polarity the same laser structure can also be used as a
photodiode.  Details of the laser photodiode structures with attached
waveguide integrated in the GaAs film 1 are shown with lase...