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RIE Resistant Films using Chemical Additives

IP.com Disclosure Number: IPCOM000109037D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Guiffre, GJ: AUTHOR [+2]

Abstract

Phosphorous compounds added to positive working resists have been shown to significantly reduce etch rates in O2 RIE systems. Phosphonoacteic acid was mixed into a solution of a positive working photoresist. Ethyl alcohol was used as a carrier solvent to facilitate the dissolution of the phosphonoacteic acid into the photoresist. A mixture of 2.5/2.0 phosphonoacteic acid and ethanol was prepared. The positive working photoresist was modified by adding 7% of the above solution to the resist. The modified photoresist solution was used to coat wafers to a thickness of 1 um - controls consisted of the same photoresist without the additive. The films were patterned in the conventional manner. No effect of the additive was seen on the resolution or the contrast of the resist.

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RIE Resistant Films using Chemical Additives

      Phosphorous compounds added to positive working resists have
been shown to significantly reduce etch rates in O2 RIE systems.
Phosphonoacteic acid was mixed into a solution of a positive working
photoresist.  Ethyl alcohol was used as a carrier solvent to
facilitate the dissolution of the phosphonoacteic acid into the
photoresist.  A mixture of 2.5/2.0 phosphonoacteic acid and ethanol
was prepared.  The positive working photoresist was modified by
adding 7% of the above solution to the resist.  The modified
photoresist solution was used to coat wafers to a thickness of 1 um -
controls consisted of the same photoresist without the additive.  The
films were patterned in the conventional manner.  No effect of the
additive was seen on the resolution or the contrast of the resist.
There was no difference in developing time versus controls.

      Following imaging, the wafers were etched using oxygen in a
conventional RIE system.  The modified resist etched at a rate of 300
angstoms per minute while the controls etched at 1000 angstoms per
minute.  The etching experiment was also performed using CF4 and no
difference in etch rate was observed.

      Disclosed anonymously.