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Thin Film MR/ Inductive Head Incorporating Nicrox Films

IP.com Disclosure Number: IPCOM000109049D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 1 page(s) / 40K

Publishing Venue

IBM

Related People

Howard, JK: AUTHOR [+4]

Abstract

It has been shown that the NiCrOx films can be used in the thin film head as the insulation layer. This can be either the wafer undercoat and/or the gap layers for both MR (magneto-resistive) and Inductive heads.

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Thin Film MR/ Inductive Head Incorporating Nicrox Films

      It has been shown that the NiCrOx films can be used in the thin
film head as the insulation layer.  This can be either the wafer
undercoat and/or the gap layers for both MR (magneto-resistive) and
Inductive heads.

      NiCrOx films, sputtered from a cermet target consisting of 80%
Cr203 and 20% Nicrome (Ni80Cr20), have superior properties for this
application:
1.   The hardness of NiCrOx film is twice as hard as that of Al203, a
commonly used material for the same application.
2.   It can be mechanically lapped to the flatness necessary for it
to be used as the wafer undercoat.
3.   The resistivity of NiCrOx films is more than 1.0x10E10
micro-ohm-cm.
4.   It can withstand high temperature (450-500~C) treatment without
degrading its mechanical and electrical properties.
5.   It can be selectively etched using Ce(NH4)NO3+CH3COOH etching
solution.  This etchant has been shown to have no effect on other
layers such as NiFe in the head structure.
6.   It is shown that there is no interaction between NiCrOx and the
alkaline developers used for photoresist processing.
7.   It is also shown that there is no adverse effect of NiCrOx on
the adjacent magnetic layers during low temperature (up to 250~C)
thermal processing.

      With properties cited above, it is believed that the NiCrOx
film can be implemented into the thin film head using simpler
fabrication processes yielding superior head p...