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Browse Prior Art Database

Deep UV Top Surface Imaging Resist

IP.com Disclosure Number: IPCOM000109050D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 1 page(s) / 66K

Publishing Venue

IBM

Related People

Ito, H: AUTHOR

Abstract

A chemical amplification resist that is highly suited for top surface imaging (TSI) is disclosed. TSI can potentially extend the resolution limit of photolithography. In the TSI scheme, only a top surface of a resist film is exposed to UV radiation and then converted to an organometallic film by reaction with organometallic reagents. Subsequent anisotropic oxygen plasma etching generates final relief images. Although conventional novolac/diazoquinone photoresists can be used in the deep UV TSI scheme, the acid-catalyzed deesterification chemistry (chemical amplification) provides a high sensitivity needed to make the deep UV lithography practical and a highly selective silylation for oxygen reactive ion etching.

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Deep UV Top Surface Imaging Resist

      A chemical amplification resist that is highly suited for top
surface imaging (TSI) is disclosed.  TSI can potentially extend the
resolution limit of photolithography.  In the TSI scheme, only a top
surface of a resist film is exposed to UV radiation and then
converted to an organometallic film by reaction with organometallic
reagents.  Subsequent anisotropic  oxygen plasma etching generates
final relief images.  Although conventional novolac/diazoquinone
photoresists can be used in the deep UV TSI scheme, the
acid-catalyzed deesterification chemistry (chemical amplification)
provides a high sensitivity needed to make the deep UV lithography
practical and a highly selective silylation for oxygen reactive ion
etching.  However, resist systems designed as single layer deep UV
resists such as tBOC fail to function in the 248 nm TSI scheme
because of their high UV transmission.  In order to reduce the
transmission of such chemically amplified deep UV resist systems,
incorporation of a dye molecule has been proposed. As an simple
alternative, a TSI resist based on the deep UV opaque
polyvinylbenzoate is disclosed.

      Polyvinylbenzoates and poly(vinylbenzoic acid) are opaque below
280 nm due to their extended conjugation. Pendant ester groups that
are susceptible to acidolysis provide chemical amplification resist
systems when used in conjunction with photochemical acid generators.
Vinylbenzoate monomers can be readily p...