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Low Power DC Plasma Apparatus for High Rate Deposition of Diamond Like Carbon

IP.com Disclosure Number: IPCOM000109187D
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2005-Mar-23
Document File: 2 page(s) / 90K

Publishing Venue

IBM

Related People

Grill, A: AUTHOR [+2]

Abstract

A DC plasma-assisted chemical vapor deposition (PACVD) apparatus for high rate deposition of diamond-like carbon (DLC) at low power densities is described.

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Low

Power

DC

Plasma Apparatus for High Rate Deposition of Diamond Like Carbon

       A DC plasma-assisted chemical vapor deposition (PACVD)
apparatus for high rate deposition of diamond-like carbon (DLC) at
low power densities is described.

      Diamond like carbon is usually deposited by a RF PACVD process
on self-biased substrates.  The bias affects the properties of DLC
films and their rate of deposition, which increases with increasing
bias.  As the self-bias is determined by the power density and
pressure in the reactor, its adjustment requires control of two
plasma parameters and its increase requires increasing the power
density.  To increase deposition rates, power densities of up to 5.5
Wcm-2 are usually needed to increase the self-bias to values around -
1kV DC (1,2).  These are high power densities often resulting in poor
film properties.

      A parallel plate DC plasma reactor is designed to operate
according to Paschen's law at conditions suitable for deposition of
DLC films.  The substrate electrode is powered with a DC power supply
operating under constant negative voltage control.  The electrode
temperature can be controlled by resistive heating.

      The reactor having two electrodes, 14 cm in diameter, separated
by a distance of 7 cm, is illustrated in the figure.  The substrate
electrode is powered with a sputtering type DC power supply with arc
suppression feature.  The powered electrode has a shield, which is
grounded together with the second electrode and with the walls of the
reactor. ...