Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Dry Release Method for Small Geometry Parts

IP.com Disclosure Number: IPCOM000109372D
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2005-Mar-24
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Fontana Jr, RE: AUTHOR [+3]

Abstract

Releasing small geometry parts by wet processing is difficult because of the need for excessive handling required to inspect, clean, separate, and retrieve the individual parts. The dry release method uses the application of a connecting layer 1 of material to connect all the small parts 2 on the wafer prior to the release step (Fig. 1). This connecting layer holds the parts together after they are released from the substrate 3 or from a sacrificial layer 4. Fig. 2 shows the released parts interconnected by means of the connecting layer. For additional processing the parts are now handled as one interconnected unit. The connecting layer is subsequently removed by dry processing, e.g., reactive ion etching, sputter etching, or plasma ashing, after any intermediate process steps are completed.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Dry Release Method for Small Geometry Parts

       Releasing small geometry parts by wet processing is
difficult because of the need for excessive handling required to
inspect, clean, separate, and retrieve the individual parts.  The dry
release method uses the application of a connecting layer 1 of
material to connect all the small parts 2 on the wafer prior to the
release step (Fig. 1).  This connecting layer holds the parts
together after they are released from the substrate 3 or from a
sacrificial layer 4.  Fig. 2 shows the released parts interconnected
by means of the connecting layer.  For additional processing the
parts are now handled as one interconnected unit.  The connecting
layer is subsequently removed by dry processing, e.g., reactive ion
etching, sputter etching, or plasma ashing, after any intermediate
process steps are completed.  The connecting layer may be patterned
in the form of a grid or it may be a continuous film.  The connecting
layer may be on the top or bottom surface of the released parts.  The
connecting layer may be anchored to a frame surrounding the released
parts.