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Integrated Complementary Structures utilizing N-channel InAs and P-channel GaSb Devices on a Common Substrate

IP.com Disclosure Number: IPCOM000109381D
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2005-Mar-24
Document File: 2 page(s) / 82K

Publishing Venue

IBM

Related People

Tiwari, S: AUTHOR [+2]

Abstract

This invention describes the use of high mobility electron- and hole- gas layers in InAs and GaSb for formation of complementary logic on a common substrate of GaSb or InAs. A simple implementation is achieved for ohmic contacts and the access to channel since InAs and GaSb have low corresponding barrier heights to electrons and holes and also form an inversion layer at the surface.

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Integrated Complementary Structures utilizing N-channel InAs and P-channel GaSb Devices on a Common Substrate

       This invention describes the use of high mobility
electron- and hole- gas layers in InAs and GaSb for formation of
complementary logic on a common substrate of GaSb or InAs.  A simple
implementation is achieved for ohmic contacts and the access to
channel since InAs and GaSb have low corresponding barrier heights to
electrons and holes and also form an inversion layer at the surface.

      Complementary FET technology can achieve significant
improvements in speed if high electron and hole mobilities and
velocities can be obtained.  Hole mobilities are usually
significantly lower than electron mobilities.  GaSb is an unusual
III-V compound with a 0.75 eV bandgap that exhibits high hole
mobilities - 700 cm2V-1s-1 at 300 K and Z10000cm2V-1s-1 at 77 K.  The
Fermi level at the surface of GaSb pins close to the valence band
edge.  Thus, a hole inversion layer forms on an exposed surface and a
low contact resistance is obtained using most common metals deposited
on the surface.  GaSb is thus an ideal medium for formation of hole
gases and MOSFETs based on them.  InAs, likewise, lattice matches to
GaSb and exhibits high electron mobilities - Z10,000cm2V-1s-1 at 300
K and Z50-100,000cm2V-1s-1 at 77 K.  It forms an electron inversion
layer on an exposed surface and exhibits a low contact resistance to
most metals deposited on the surface.  In this invention the use of
InAs n-channel devices and GaSb p-channel devices by integrating them...