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Chemical Vapor Deposition of Cu3Ge for High Aspect Ratio Metallization

IP.com Disclosure Number: IPCOM000109666D
Original Publication Date: 1992-Sep-01
Included in the Prior Art Database: 2005-Mar-24
Document File: 2 page(s) / 73K

Publishing Venue

IBM

Related People

Edelstein, DC: AUTHOR [+3]

Abstract

A method is disclosed for low-temperature reactive formation of low-resistivity Cu3Ge (1) metallic compound which is capable of filling very high aspect ratio features. This material is inert against corrosion and oxidation and is compatible with other low temperature processing for VLSI interconnects. The compound is reactively formed in the stoichiometric Cu3Ge phase using the precursors GeH4 (germane) and any one of various ligand-stabilized Cu(I) b-diketonates from which the CVD of pure copper metal has been observed (2). Equations 1 and 2 illustrate the anticipated decomposition chemistry of the germanium and copper precursors, respectively, under the deposition conditions indicated below.

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Chemical Vapor Deposition of Cu3Ge for High Aspect Ratio Metallization

       A method is disclosed for low-temperature reactive
formation of low-resistivity Cu3Ge (1) metallic compound which is
capable of filling very high aspect ratio features.  This material is
inert against corrosion and oxidation and is compatible with other
low temperature processing for VLSI interconnects.  The compound is
reactively formed in the stoichiometric Cu3Ge phase using the
precursors GeH4 (germane) and any one of various ligand-stabilized
Cu(I) b-diketonates from which the CVD of pure copper metal has been
observed (2).  Equations 1 and 2 illustrate the anticipated
decomposition chemistry of the germanium and copper precursors,
respectively, under the deposition conditions indicated below.
      GeH4      -> Ge + 2H2                             (1)
      2{(COD)Cu(HFAC)}        -> Cu + 2COD + Cu(HAFC)2  (2)
The reaction shown above for
(1,5-cyclooctadienyl)copper(I)hexafluoroacetylacetonate is general
for all of the ligand-stabilized copper(I) b-diketonates.  The
reactor used is the warm-walled, BEOL experimental 5-inch reactor.
The figure shows the reactor.  A quartz bell jar with inlets for
precursor and carrier gases is vacuum-sealed  to a stainless steel
bottom plate.  Part of the bottom plate consists of a pedestal to
which is brazed a copper chuck, containing resistive heating
cartridges.  For the precursors indicated above, chuck temperatures
(substrate...