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Modified Polymer Outer Layer as Etch Stop in Microelectronic Applications

IP.com Disclosure Number: IPCOM000109688D
Original Publication Date: 1992-Sep-01
Included in the Prior Art Database: 2005-Mar-24
Document File: 1 page(s) / 40K

Publishing Venue

IBM

Related People

Babich, E: AUTHOR [+3]

Abstract

Disclosed is a method for reducing the plasma etch rate on thin film polymers in microelectronic applications.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 83% of the total text.

Modified Polymer Outer Layer as Etch Stop in Microelectronic Applications

       Disclosed is a method for reducing the plasma etch rate
on thin film polymers in microelectronic applications.

      Some microelectronic applications consist of planar
polymer-metal structures.  If plasma processes are employed, the use
of a thin layer of etch stop is required to prevent over-etching due
to different etch rates.  Silicon-containing polyimides can be used
as "etch stops", but they usually give poor adhesion.

      A new approach is described here.  The outer-layer of polyimide
is chemically transformed to polyamic acid (1,2) and then the
silicon-containing organic compound is introduced to the modified
outer-layer by the chemical reaction with the carboxylic acid
functional groups.  The modified surface which contains silicon
materials acts as an etch barrier layer.

      Two different silicon-containing organic materials
{bis(dimethylamino) dimethylsilane,
1,2-bis(dimethylamino)tetramethyldisilylethylene} have been
introduced to the surfaces of poly(pyromellitic oxydianiline) and
poly(biphenyldianhydride para-phenyldiamine) (BPDA- PDA).  External
reflectance infrared (ERIR) spectra of the modified surfaces exhibit
significant changes compared to that of polyamic acid.  One
distinguished peak is due to the carbonyl stretching of ester
product.  XPS spectrum shows 7-10 silicon atomic percent.  These
results indicate the incorporation of silicon-contai...