Browse Prior Art Database

Tungsten Based Films for the Generation of Photomasks

IP.com Disclosure Number: IPCOM000109947D
Original Publication Date: 1992-Sep-01
Included in the Prior Art Database: 2005-Mar-25
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Badami, DA: AUTHOR [+5]

Abstract

Thin films of tungsten or tungsten silicide do not transmit UV light and can be etched in a common CF4-RIE tool. Because of this unusual combination of optical properties and etch characteristics, tungsten can be used for a dry (CF4) etch, mask-making process. This process is outlined in the drawing.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Tungsten Based Films for the Generation of Photomasks

      Thin films of tungsten or tungsten silicide do not transmit UV
light and can be etched in a common CF4-RIE tool.  Because of this
unusual combination of optical properties and etch characteristics,
tungsten can be used for a dry (CF4) etch, mask-making process.  This
process is outlined in the drawing.

      A substrate, such as quartz, is coated with an evaporated W
film, and a resist is then applied, for example, by spin-coating.

      The resist is imagewise exposed, for example, with UV, E-beam
or X-ray, developed, and subjected to reactive ion etching.  The
resist is then stripped.  The result is a patterned tungsten covering
on the substrate.

      Disclosed anonymously.