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Oval Inverted Magnetron Plasma Sputtter Apparatus

IP.com Disclosure Number: IPCOM000110037D
Original Publication Date: 1992-Oct-01
Included in the Prior Art Database: 2005-Mar-25
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Sandstrom, RL: AUTHOR

Abstract

Disclosed is a single-oval inverted magnetron plasma sputter (OIMPS) apparatus. A simple apparatus has been built (*). However, the OIMPS apparatus has rounded sides to minimize the plasma instability problems and the second order grad-B X B drift instability problem. The aspect ratio for this OIMPS source for magnetron plasmas should be N 2:1 (length-height). Large area substrate coverage with very uniform deposition areas has no boundary size limit for this design. Greater target utilization percentage is possible. Coating both sides of a stationary substrate simultaneously is advantageous for some applications in the semiconductor field. Uniform coating all sides of a wire is possible. This source has a large dynamic pressure range (0.5 mTorr - 500 mTorr) without dark space changes.

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Oval Inverted Magnetron Plasma Sputtter Apparatus

       Disclosed is a single-oval inverted magnetron plasma
sputter (OIMPS) apparatus.  A simple apparatus has been built (*).
However, the OIMPS apparatus has rounded sides to minimize the plasma
instability problems and the second order grad-B X B drift
instability problem.  The aspect ratio for this OIMPS source for
magnetron plasmas should be N 2:1 (length-height).  Large area
substrate coverage with very uniform deposition areas has no boundary
size limit for this design.  Greater target utilization percentage is
possible.  Coating both sides of a stationary substrate
simultaneously is advantageous for some applications in the
semiconductor field.  Uniform coating all sides of a wire is
possible.  This source has a large dynamic pressure range (0.5 mTorr
- 500 mTorr) without dark space changes.  Compact design (10- 1000
cm3 geometries are possible to accommodate a variety of substrate
sizes easily.  Permanent magnets are used.  Magnets and pole-piece
geometries are easily changed which can be accomplished from the
outside without breaking vacuum.  No additional water cooling is
required for the magnets (air cooled is fine).  Substrate rotation
is not needed for uniform thickness (< 4%) over large size areas.
High deposition rates between 1-10 m/min. are possible with metal
materials. Highly-ionic and insulating materials have above average
deposition rates.  Light emission experiments, line-of-sight th...