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High Speed, Low Power Low Voltage P-channel NVRAM using Channel Hot Carrier Programming and Tunneling Erase through Silicon Rich Oxide

IP.com Disclosure Number: IPCOM000110077D
Original Publication Date: 1992-Oct-01
Included in the Prior Art Database: 2005-Mar-25
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Acovic, A: AUTHOR [+6]

Abstract

Disclosed is a p-channel cell combining the high electron injection of the p-channel MOSFET with the high tunneling efficiency of silicon-rich oxide (SRO). High electron tunneling efficiency and low voltage erase are achieved by using SRO/SiO2 as tunneling dielectric.

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High Speed, Low Power Low Voltage P-channel NVRAM using Channel Hot Carrier Programming and Tunneling Erase through Silicon Rich Oxide

       Disclosed is a p-channel cell combining the high electron
injection of the p-channel MOSFET with the high tunneling efficiency
of silicon-rich oxide (SRO).  High electron tunneling efficiency and
low voltage erase are achieved by using SRO/SiO2 as tunneling
dielectric.

      In the conventional EEPROM or Flash cell, channel hot electron
injection into the floating gate from the drain depletion region of
n-channel device is used as a programming technique.  In this
technique, in order to obtain sufficiently injected electrons, high
voltages are required on the drain and gate.  Therefore, huge power
consumption takes place during programming cycle.  In addition, the
efficiency of electron injection is fairly small.  In the stacked
gate cell, erase is performed by applying high voltage on the source
which will limit the scalability of the NVRAM cell.

      This invention reports a new NVRAM structure which consists of
a stacked gate p-channel cell with SRO/SEIS as interpoly dielectric.
It is experimentally demonstrated that this cell can be programmed
and erased by an internal 5 V supply.

      In this new invention, efficient hot electron injection at low
gate voltage in p-channel device is achieved.  By using SRO/SiO2 as
interpoly dielectric for erase injector, erase can be accomplished
through SRO/SiO2 at low...