Browse Prior Art Database

Bond Pad Metallurgy for Wire Bonding

IP.com Disclosure Number: IPCOM000110195D
Original Publication Date: 1992-Oct-01
Included in the Prior Art Database: 2005-Mar-25
Document File: 1 page(s) / 24K

Publishing Venue

IBM

Related People

Bergeron, RJ: AUTHOR [+5]

Abstract

Where a mixture of aluminum/copper/silicon (Al/Cu/Si) is used in final wiring metallurgy for avoidance of spiking into underlying Si and electromigration resistance, thin (100nm) titanium (Ti) plus several microns of Al is added over bonding pads when wire bonding connection is to be made. Yield of good bonds and bond reliability are substantially improved for both Au and Al wire bonds by this addition to pad surface metallurgy.

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Bond Pad Metallurgy for Wire Bonding

      Where a mixture of aluminum/copper/silicon (Al/Cu/Si) is used
in final wiring metallurgy for avoidance of spiking into underlying
Si and electromigration resistance, thin (100nm) titanium (Ti) plus
several microns of Al is added over bonding pads when wire bonding
connection is to be made.  Yield of good bonds and bond reliability
are substantially improved for both Au and Al wire bonds by this
addition to pad surface metallurgy.

      Ti plus Al may be deposited on bonding pad areas of a final
metallurgy of Al/Cu/Si by any of several means, e.g., vacuum
deposition in a lift-off process or through a deposition mask.  An
annealing treatment following deposition improves adhesion of the two
materials.

      Disclosed anonymously.