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A Dry Etch Planarization Technique

IP.com Disclosure Number: IPCOM000110223D
Original Publication Date: 1992-Oct-01
Included in the Prior Art Database: 2005-Mar-25
Document File: 1 page(s) / 25K

Publishing Venue

IBM

Related People

Petrillo, EJ: AUTHOR [+3]

Abstract

This dry etch planarization technique uses a planarizing resist which has been processed by silylation. In the usual planarization techniques for planarizing excess polysilicon from trench filling, a resist is deposited over the polysilicon and surrounding oxide. The planarizing resist is then soaked in a solvent containing the silylating agent. This drastically changes the dry etch characteristics of the resist. Using reactive ion etching, the structure may then be planarized as the etch is directional and the silicon etch rate equals that of the silylated resist etch rate and has a high selectivity to silicon oxide and silicon nitride. This can also be used in those cases where an oxide etch stop is not being utilized but rather Si3N4 is desired as the etch stop.

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A Dry Etch Planarization Technique

      This dry etch planarization technique uses a planarizing resist
which has been processed by silylation.  In the usual planarization
techniques for planarizing excess polysilicon from trench filling, a
resist is deposited over the polysilicon and surrounding oxide.  The
planarizing resist is then soaked in a solvent containing the
silylating agent.  This drastically changes the dry etch
characteristics of the resist.  Using reactive ion etching, the
structure may then be planarized as the etch is directional and the
silicon etch rate equals that of the silylated resist etch rate and
has a high selectivity to silicon oxide and silicon nitride.  This
can also be used in those cases where an oxide etch stop is not being
utilized but rather Si3N4 is desired as the etch stop.

      Disclosed anonymously.