Browse Prior Art Database

Polishing of YBa2Cu3O7 (YBCO) Thin Films

IP.com Disclosure Number: IPCOM000110230D
Original Publication Date: 1992-Oct-01
Included in the Prior Art Database: 2005-Mar-25
Document File: 1 page(s) / 28K

Publishing Venue

IBM

Related People

Eidelloth, W: AUTHOR [+2]

Abstract

Disclosed is a mechanical/chemical polishing process that facilities removal of both particulates and segregated second phases from the surface of highly oriented YBa2Cu3O7 (YBCO) thin films is discussed.

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Polishing of YBa2Cu3O7 (YBCO) Thin Films

      Disclosed is a mechanical/chemical polishing process that
facilities removal of both particulates and segregated second phases
from the surface of highly oriented YBa2Cu3O7 (YBCO) thin films is
discussed.

      The polishing agent is 0.7% HF in deionized water.  Using white
wax (glycol phtalate), the substrates/films are mounted on a
polishing block.  The polishing wheel is rotated with a polishing pad
and some resistive pressure is placed on the samples.  Polishing
takes 10-20 minutes to remove particulates and second phase
outgrowths.

      The method is quick, simple, and self-limiting.  The removal
process ceases as a smooth surface is obtained.  A thin, fluoride
containing passivation layer results from the polishing action, but
can be removed easily by an oxygen plasma.  This process allows
subsequent growth of epitaxial insulating layers (e.g., SrTiO3) or
highly oriented YBCO layers.

      Disclosed anonymously.