Browse Prior Art Database

High-Density Storage with E-Beam Columns

IP.com Disclosure Number: IPCOM000111320D
Original Publication Date: 1994-Feb-01
Included in the Prior Art Database: 2005-Mar-26
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Gue ret, P: AUTHOR [+3]

Abstract

A high-density read-only memory is presented. It consists of two conducting layers separated by an insulator. Conductor 1 and the insulator have holes at the bit 1 (bit 0) positions. The memory is read by an electron deflecting beam (part of a miniaturized, low voltage electron-beam column) over the storage medium, while currents I1 and I2 are monitored. Where a bit 1 (bit 0) is written, I2 (I1) exhibits a current pulse from the electron beam. Since E-beam diameters smaller than 10 nm can be realized, high storage densities are possible.

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High-Density Storage with E-Beam Columns

      A high-density read-only memory is presented.  It consists of
two conducting layers separated by an insulator.  Conductor 1 and the
insulator have holes at the bit 1 (bit 0) positions.  The memory is
read by an electron deflecting beam (part of a miniaturized, low
voltage electron-beam column) over the storage medium, while currents
I1 and I2 are monitored.  Where a bit 1 (bit 0) is written, I2 (I1)
exhibits a current pulse from the electron beam.  Since E-beam
diameters smaller than 10 nm can be realized, high storage densities
are possible.