Browse Prior Art Database

Imageable Oxygen Plasma Barrier for Lithographic Applications

IP.com Disclosure Number: IPCOM000112119D
Original Publication Date: 1994-Apr-01
Included in the Prior Art Database: 2005-Mar-26
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Babich, E: AUTHOR [+6]

Abstract

A new Imageable oxygen Plasma Barrier (IPB) is described which can be used in multilayer metallization systems based on polyimides or other organic polymeric insulators separating metal layers in structures known as Thin Film packaging Modules (TFM).

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Imageable Oxygen Plasma Barrier for Lithographic Applications

      A new Imageable oxygen Plasma Barrier (IPB) is described which
can be used in multilayer metallization systems based on polyimides
or other organic polymeric insulators separating metal layers in
structures known as Thin Film packaging Modules (TFM).

      IPB material should be thermally stable up to 400ºC for one
hour without any decomposition; it should have good adhesion to
polyimide and copper along with low etch rate in oxygen plasma,
solvent resistance in various solvents used in the process (NMP), low
dielectric costant and photosensitivity to UV irradiation.

      Such a material was prepared by a reaction of silsesquioxanes
containing reactive hydroxy-groups with polyfunctional acetoxysilanes
which produce polyacetoxysilsesquioxanes (PAS) in a simple thermal
reaction (90ºC, 24 hrs in diglyme solution).  Such PAS material
in combination with catalytic amounts of onium salt
(Ph&sub3.S.SbF&sub6.)  has deep UV sensitivity of about 10-20 mJ/cm2
and meets all other requirements to materials used in TFM fabrication
process.