Browse Prior Art Database

Photoresist/Sputtered Chrome Bilevel Masking for Extended Acid Etch

IP.com Disclosure Number: IPCOM000112307D
Original Publication Date: 1994-Apr-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Denison, EV: AUTHOR [+2]

Abstract

The etch of encapsulating alumina overcoats in thin film tape head construction is enhanced utilizing a photoresist/sputter chrome bilevel etch mask.

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Photoresist/Sputtered Chrome Bilevel Masking for Extended Acid Etch

      The etch of encapsulating alumina overcoats in thin film tape
head construction is enhanced utilizing a photoresist/sputter chrome
bilevel etch mask.

      Prior to forming the bond pads (Figure) (A) a layer of SI02 (B)
is deposited to act as an etch stop prohibiting attack of underlying
structures.  After overcoat alumina deposition and lapback (C) a
layer of chrome (D) is sputter deposited, the chrome layer is
patterned via a photoresist (E) chemically matched to the chrome to
enhance adhesion properties.  The chrome is sputter etched and the
photoresist hardened to allow prolonged exposure to elevated
temperature acids.  The via window (F) defined by the
photoresist/sputter chrome mask is etched such that the sputter
chrome acts as the etch mask while the photoresist acts as an
effective pinhole fill (G) resulting in a pinhole free, long duration
etch stencil.