Browse Prior Art Database

Sputtering System

IP.com Disclosure Number: IPCOM000112471D
Original Publication Date: 1994-May-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Kitahara, H: AUTHOR [+2]

Abstract

Disclosed is a sputtering system to make molybdenum/aluminum film that brings about no tree-like defect after wet etching. By arranging adequate chamber in polygon style and transferring substrate in an adequate order, oxygen diffuse into aluminum film and form molybdenum/aluminum oxide/aluminum structure efficiently.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 90% of the total text.

Sputtering System

      Disclosed is a sputtering system to make molybdenum/aluminum
film that brings about no tree-like defect after wet etching.  By
arranging adequate chamber in polygon style and transferring
substrate in an adequate order, oxygen diffuse into aluminum film and
form molybdenum/aluminum oxide/aluminum structure efficiently.

      In the case of wet etching of molybdenum/aluminum film with the
mixture of phosphoric acid, acetic acid, nitric acid and water,
grains of molybdenum aluminum alloy gets out of film and makes
tree-like defect that causes inter-layer short.  As aluminum oxide
layer prevent molybdenum from diffusing into aluminum layer,
molybdenum/aluminum oxide/aluminum structure suppresses tree-like
defect.

      To make molybdenum/aluminum oxide/aluminum structure
efficiently, multi-chamber type sputtering system with oxygen
exposure chamber 4 is suitable.  By arranging loading chamber 5,
unloading chamber 6, molybdenum sputter chamber 1, aluminum sputter
chamber 2, heating chamber 3, and oxygen exposure chamber 4 in
polygon style, and transfer substrate 8 from loading chamber 5 to
heating chamber 3, aluminum sputter chamber 2, oxygen exposure
chamber 4, molybdenum sputter chamber 1, and unloading chamber 6 in
turn, molybdenum/aluminum oxide/aluminum structure is made with high
throughput and with small space.

      Oxygen exposure is also available in sputtering chamber,
loading chamber or unloading chamber.  This techniqu...