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In-situ Patterning of High Dielectric Films Prepared by Sol-Processing

IP.com Disclosure Number: IPCOM000112602D
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Brady, MJ: AUTHOR [+2]

Abstract

Disclosed is a method that utilizes the following process steps, to define patterns of thin high dielectric constant films in situ. Using standard photolithographic semiconductor processing, a substrate is coated with a positive resist, i.e., Shipley.AZ, etc. The resist is exposed, developed, baked, and then coated with the sol gel solution.

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In-situ Patterning of High Dielectric Films Prepared by Sol-Processing

      Disclosed is a method that utilizes the following process
steps, to define patterns of thin high dielectric constant films in
situ.  Using standard photolithographic semiconductor processing, a
substrate is coated with a positive resist, i.e., Shipley.AZ, etc.
The resist is exposed, developed, baked, and then coated with the sol
gel solution.

      Before the coating with the sol-gel solution, the resist is
baked at a temperature of 130-140ºC to prevent it from being
dissolved by the solvent of the sol-gel.  The sol-gel coated sample
is baked at a temperature not exceeding that of the resist bake, to
drive out the solvents of the sol-gel film, and the unexposed resist
pattern is removed by dissolving in acetone.  The patterned sol-gel
film is finally annealed in oxygen to the high temperature required
for the formation of the crystalline phase, resulting in a patterned
crystalline phase of a high dielectric material.

      The disclosed method avoids patterning of blanket high
dielectric films, which then are subjected to either dry or wet
etching to generate the pattern.  The in-situ method is a one-two
step process, spin resist, spin sol-gel high dielectric constant
film, thus reducing fabrication steps and reducing contamination.

      The technique can be used in fabrication of integrated devices
based on high dielectric constant ferroelectric/paraelectric type
compounds...