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Binary Solvent Mixtures for Simultaneous Resist/Underlayer Stripping

IP.com Disclosure Number: IPCOM000113008D
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Horr, RA: AUTHOR [+3]

Abstract

Defects in photoresist caused by solvent splatter during edge and backside removal of resist and under-layer of antireflective coating material are reduced by this new process. Binary mixtures of solvents are described which are applied in a one step process as opposed to serial application of solvents specific to photoresist followed by solvent specific to removal of the underlayer.

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Binary Solvent Mixtures for Simultaneous Resist/Underlayer Stripping

      Defects in photoresist caused by solvent splatter during edge
and backside removal of resist and under-layer of antireflective
coating material are reduced by this new process.  Binary mixtures of
solvents are described which are applied in a one step process as
opposed to serial application of solvents specific to photoresist
followed by solvent specific to removal of the underlayer.

      Two different binary solvent mixtures have been found to be
very effective in the removal of deep ultraviolet (DUV) resist and
DUV anti- reflective coatings:

1.  Propyleneglycol methyl ether acetate (PGMEA) + cyclohexane.

2.  PGMEA + gamma-butyrolactone (GBL).

      Best composition of a mixture is dependent on the specific
application.  For the case of IBM APEX 2311 photoresist over
antireflective coatings, e.g., Brewer Science CD3 or IBM BARL 248,
the following mixtures are found to be effective:

o   between 20% to 50% cyclohexane and a balance of PGMEA

o   between 20% to 50% GBL and a balance of PGMEA

      In addition to the major benefit of reduced splatter defects,
cost savings are realized in storage of only one solvent and shorter
processing time.