Browse Prior Art Database

Very High Density Read Only Memory

IP.com Disclosure Number: IPCOM000113694D
Original Publication Date: 1994-Sep-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Briska, M: AUTHOR [+2]

Abstract

Binary information can be placed on single atomic layers of crystalline MeX[2] (Me is a transition metal such as Nb, Ta, Ti, etc. and X is a chalcogene such as S, Se, etc.) type of material which shows anisotropic electrical properties. In Fig. 1 a NbS[2] monocristal with Nb-layers perpendicular to the surface is coated with a thin insulator several Angstroms thick and with a metallisation layer to provide an electrical contact. Due to an electrical pulse supplied by Scanning Tunnelling Microscopy (STM) needles, the insulator will locally break-through between the layer of Nb atoms and the metallisation layer, thus producing a "bit 1" in contrast to insulating layers of Nb atoms "bit 0". The binary information can be read by the STM needles thus gaining a storage density of atomic dimensions.

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Very High Density Read Only Memory

      Binary information can be placed on single atomic layers of
crystalline MeX[2]  (Me is a transition metal such as Nb, Ta, Ti,
etc. and X is a chalcogene such as S, Se, etc.)  type of material
which shows anisotropic electrical properties.  In Fig. 1 a NbS[2]
monocristal with Nb-layers perpendicular to the surface is coated
with a thin insulator several Angstroms thick and with a
metallisation layer to provide an electrical contact.  Due to an
electrical pulse supplied by Scanning Tunnelling Microscopy (STM)
needles, the insulator will locally break-through between the layer
of Nb atoms and the metallisation layer, thus producing a "bit 1" in
contrast to insulating layers of Nb atoms "bit 0".  The binary
information can be read by the STM needles thus gaining a storage
density of atomic dimensions.