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System Hardware and Process Improvements in Tetra Ethyl Ortho Silicate Vertical Thermal Reactor Application to CMOS 16 Megabit DRAM Chips

IP.com Disclosure Number: IPCOM000113760D
Original Publication Date: 1994-Oct-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Raffin, P: AUTHOR

Abstract

Disclosed is a process and tool interdependent device to have the best working conditions performance. The system is a Tetra Ethyl Ortho Silicate (TEOS) Vertical Thermal Reactor (VTR) used for CMOS V process requirements. With vendor original design, poor performances have been obtained and found to be a detractor of product final yield loss. System hardware changes have been done which involved readjustments in process to improve performances.

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System Hardware and Process Improvements in Tetra Ethyl Ortho Silicate
Vertical Thermal Reactor Application to CMOS 16 Megabit DRAM Chips

      Disclosed is a process and tool interdependent device to have
the best working conditions performance.  The system is a Tetra Ethyl
Ortho Silicate (TEOS) Vertical Thermal Reactor (VTR) used for CMOS V
process requirements.  With vendor original design, poor performances
have been obtained and found to be a detractor of product final yield
loss.  System hardware changes have been done which involved
readjustments in process to improve performances.

      The Figure schematically shows the whole TEOS VTR system that
has been improved by adding some significant technical features.

      Some changes in tool and process have significantly improved
the tool uptime, the contamination level and the thickness uniformity
of deposited layers.  The main detractors are respectively exhaust
by-product build-up, TEOS vapor condensation and gas outlet
backs-treaming.

The major improvement are listed hereafter with performance rate and
associate changes.
  o  FM level : a 4x reduction with
     -  TEOS and N2 delivery lines heating
     -  Pre-mixed N2 and TEOS flows
     -  In-situ VDS exhaust purge
     -  2 holes pedestal
     -  reducing piping diameter
  o  Quartzware timelife : a 4x increase with
     -  Post deposit O2 purge
  o  Exhaust piping timelife : a 2x increase with
     -  P...