Browse Prior Art Database

Indium Tin Oxide Patterning Method

IP.com Disclosure Number: IPCOM000114280D
Original Publication Date: 1994-Dec-01
Included in the Prior Art Database: 2005-Mar-28
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Kitahara, H: AUTHOR [+2]

Abstract

Disclosed is a method to reduce one photo process of Thin Film Transistor/Liquid Crystal Display (TFT/LCD) manufacturing. By lifting off the molybdenum that is used to make ohmic contact layer, self-aligned patterning of Indium Tin Oxide (ITO) is available. Using self-aligned ITO patterning, the cost of photo process is removed and the defects that are made during photo process are reduced.

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Indium Tin Oxide Patterning Method

      Disclosed is a method to reduce one photo process of Thin Film
Transistor/Liquid Crystal Display (TFT/LCD) manufacturing.  By
lifting off the molybdenum that is used to make ohmic contact layer,
self-aligned patterning of Indium Tin Oxide (ITO) is available.
Using self-aligned ITO patterning, the cost of photo process is
removed and the defects that are made during photo process are
reduced.

      The Figure shows the process to make self-alignment of ITO.
After patterning of silicon nitride on gate electrode/gate
insulator/amorphous silicon structure (Fig. (a)), n+ amorphous and
molybdenum is deposited to make ohmic contact.  Then n+ amorphous
silicon and molybdenum is patterned to make the surrounding area of
pixel (Fig. (b)).  Then ITO is deposited by sputtering (Fig. (c)),
and by etching of n+ amorphous and molybdenum, ITO is patterned to
make pixel area (Fig. (d)).  Then data line is deposited and
patterned, and by dry etching process n+ amorphous silicon and
molybdenum between pixel and data line is removed.  With this method,
ITO photo process is reduced.

      This process can also be used with another contact material,
such as titan or tungsten.  This process can be also used in
semiconductor process.