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New Structure for Thin Film Transistor/Liquid Crystal Display

IP.com Disclosure Number: IPCOM000114441D
Original Publication Date: 1994-Dec-01
Included in the Prior Art Database: 2005-Mar-28
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Terazawa, S: AUTHOR

Abstract

This article describes a pixel structure of Thin Film Transistor / Liquid Crystal Display (TFT/LCD) which has a shielding type storage capacitor (Cs) constructed of two capacitors connected in series to decrease lateral field effect on a pixel and decrease pixel defects.

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New Structure for Thin Film Transistor/Liquid Crystal Display

      This article describes a pixel structure of Thin Film
Transistor / Liquid Crystal Display (TFT/LCD) which has a shielding
type storage capacitor (Cs) constructed of two capacitors connected
in series to decrease lateral field effect on a pixel and decrease
pixel defects.

      This pixel structure Type-1 is shown in Fig. 1 and Type-2 is in
Fig. 2, respectively.  The equivalent circuit of Type-1 is shown in
Fig. 3, Type-2 is in Fig. 4, respectively.  In case of Type-1, the Cs
is connected to the cs-line.  In case of Type-2, the Cs(n) is
connected to the gate-line GL(n-1).
  The value of this type of Cs is
      cs = cs1*cs2 / (cs1 + cs2).
  The voltage of the electrode  A is
      VA = Vcsl +(Vp - Vcsl)*cs1/(cs1+cs2).
      Vp is the voltage of the pixel electrode.
      Vcsl is the voltage of the cs-line.
      In case type-2, Vcsl = Vgl(n-1).
  The voltage difference between the pixel electrode and the
electrode
A is
      DVpc = (Vp-Vcsl)*cs1/(cs1+cs2).
  DVpc is decreased by increasing cs2 and the lateral field effect is
decreased.