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Trench Profile Control in Reactive Ion Etching/Magnetically Enhanced Reactive Ion Etching Reactors

IP.com Disclosure Number: IPCOM000114807D
Original Publication Date: 1995-Feb-01
Included in the Prior Art Database: 2005-Mar-29
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Cox, RD: AUTHOR [+3]

Abstract

Modifiers are described that permit the control of trench profiles on semiconductor wafers by modification of parameters used in Reactive Ion Etching/Magnetically Enhanced Reactive Ion Etching (RIE/MIE) reactors.

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Trench Profile Control in Reactive Ion Etching/Magnetically Enhanced
Reactive Ion Etching Reactors

      Modifiers are described that permit the control of trench
profiles on semiconductor wafers by modification of parameters used
in Reactive Ion Etching/Magnetically Enhanced Reactive Ion Etching
(RIE/MIE) reactors.

      In the first instance, the use of NF3-N2 as etchants instead of
NF3-Ar in an RIE process improves the etch rate selectivity between
silicon and photoresist.  The result is an equivalent trench depth
with reduced beveling of the etched material.  In addition, etch bias
is reduced.

      In the second instance, a rotating magnetic field can be used
to modify an otherwise anisotropic NF3-based RIE process to yield
sloped trench sidewalls.  The degree of slope can be controlled by
varying the strength of the magnetic field.