Browse Prior Art Database

Mixed E-Beam + Optical Lithographic Patterning Process

IP.com Disclosure Number: IPCOM000114811D
Original Publication Date: 1995-Feb-01
Included in the Prior Art Database: 2005-Mar-29
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Bucchignano, JJ: AUTHOR [+4]

Abstract

Mixed e-beam + optical lithography processes are often desirable for applications where the device or circuit design consists of both large and small features. Optical lithography is used on the coarser features of the pattern (which would typically consume enormous e-beam writing time), and e-beam lithography is on those parts of a pattern whose dimensions are beyond the resolution of optical techniques. This allows one to have the advantage of e-beam patterning resolution with a throughput closer to that of conventional optical lithography.

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Mixed E-Beam + Optical Lithographic Patterning Process

      Mixed e-beam + optical lithography processes are often
desirable for applications where the device or circuit design
consists of both large and small features.  Optical lithography is
used on the coarser features of the pattern (which would typically
consume enormous e-beam writing time), and e-beam lithography is on
those parts of a pattern whose dimensions are beyond the resolution
of optical techniques.  This allows one to have the advantage of
e-beam patterning resolution with a throughput closer to that of
conventional optical lithography.

      The disclosed process is specifically intended for use with
e-beam resists that are not optically sensitive.  The process relies
on the sequential application, patterning, and development of two
resists:  an e-beam optimized resist which becomes cross-linked after
patterning, and an optical resist (which can be positive or
negative).  The resulting mixed resist layer will generally be
comprised of areas with a single layer of either resist and areas
with double layers of resist where the two resist patterns overlap.
Once the pattern of the mixed resist layer is established, it can
transferred into the underlying structure.  The process works because
(1) the patterned e-beam resist remaining on the wafer is
cross-linked and is therefore not affected by the subsequent
application and development of the optical resist, and (2) the
optical resist forms a co...