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Post Chemical Mechanical Polishing Cleaning of Semiconductor Wafer

IP.com Disclosure Number: IPCOM000115018D
Original Publication Date: 1995-Mar-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Huynh, CK: AUTHOR [+2]

Abstract

A method is described which is effective for removing polishing slurry residues following Chemical Mechanical Polishing (CMP) of semiconductor wafers. The residues produced by CMP must be removed prior to subsequent wafer processing, and the removal technique must not be damaging to the wafer. Water washing alone, or brushcleaning with deionized water is not sufficient for removing residual contaminants. Cleaning either by immersion or by brushcleaning are improved substantially if a surfactant (such as Igepal CO-530* {polyoxyethylene glycol} or Triton X-100* {polyoxyethylene glycol}) is added to the cleaning process. Treatment with these surfactants preserves the hydrophobic nature of the polished surface of the wafer.

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Post Chemical Mechanical Polishing Cleaning of Semiconductor Wafer

      A method is described which is effective for removing polishing
slurry residues following Chemical Mechanical Polishing (CMP) of
semiconductor wafers.  The residues produced by CMP must be removed
prior to subsequent wafer processing, and the removal technique must
not be damaging to the wafer.  Water washing alone, or brushcleaning
with deionized water is not sufficient for removing residual
contaminants.  Cleaning either by immersion or by brushcleaning are
improved substantially if a surfactant (such as Igepal CO-530*
{polyoxyethylene glycol} or Triton X-100* {polyoxyethylene glycol})
is added to the cleaning process.  Treatment with these surfactants
preserves the hydrophobic nature of the polished surface of the
wafer.

      In a particular cleaning method using surfactants, CMP is used,
but before the polished semiconductor product is allowed to dry, it
is placed in a solution of diluted surfactant at ambient temperature
for several minutes.  Next the product is rinsed with H2O to
eliminate any acid/base residuals left by polishing slurries.  Then
the surface is brushcleaned with deionized water to which a very
small amount of one of the cited surfactants has been added.
  *  Trademark of 3M, Commercial Chemical Division.