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Structure of the Thin Film Transistor with the Anodic Oxide LAYER

IP.com Disclosure Number: IPCOM000115109D
Original Publication Date: 1995-Mar-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 4 page(s) / 59K

Publishing Venue

IBM

Related People

Arai, T: AUTHOR [+3]

Abstract

The structure of the Thin Film Transistors (TFTs) array which have the anodic oxide layer as a gate dielectric is described to separate the gate lines from the bus lines for anodization at the same time when opening the contact holes.

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Structure of the Thin Film Transistor with the Anodic Oxide LAYER

      The structure of the Thin Film Transistors (TFTs) array which
have the anodic oxide layer as a gate dielectric is described to
separate the gate lines from the bus lines for anodization at the
same time when opening the contact holes.

      Fig. 1 shows an example of this structure.  The gate electrode
1 has the double layered structure of Aluminum (Al) and Tantalum
(Ta).  Both the gate line 2 and the bus line 3 consist of Al.  They
are connected to each other by the pad 4 which consists of Ta.  These
lines and pads are anodized simultaneously (see frame 5).  The Ta
oxides layer and the Ta layer are removed using the dry etching
method (see frame 6).  Now both the separation gate lines from the
bus lines and opening contact holes are completed (see frame 7).
This
structure needs neither adding a photo engraving process for
separation
the gate lines from the bus lines nor selective etching of the
Al-oxides
layer on Al.

      Fig. 2 and 3 are other examples of this structure.  The gate
electrode consists of Al and other metal such as molybdenum (Mo).
The
Al layer and the Al oxides layer are removed using a wet etching
method.