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Oxosulfonium Triflates: New Photoacid Generators for Acid-catalyzed, Chemically-Amplified Photoresists

IP.com Disclosure Number: IPCOM000115380D
Original Publication Date: 1995-Apr-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Breyta, G: AUTHOR [+4]

Abstract

Two new onium salts are reported which have been found to be effective photoacid generators in t-BOC-protected hydroxystyrene resist materials. The onium salts, triphenyloxosulfonium triflate and diphenyltolyloxosulfonium triflate, provided 1-micron resolution in a t-BOCST/HOST resist system at a 1% loading (by weight, with respect to polymer). The resist was exposed to 5-20 mJ at 248 nm and developed in 0.21N TMAH. These compounds were prepared in a straightforward manner by treatment of the corresponding sulfonium triflate with m-chloroperbenzoic acid in buffered bicarbonate solution.

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Oxosulfonium Triflates:  New Photoacid Generators for Acid-catalyzed,
Chemically-Amplified Photoresists

      Two new onium salts are reported which have been found to be
effective photoacid generators in t-BOC-protected hydroxystyrene
resist materials.  The onium salts, triphenyloxosulfonium triflate
and diphenyltolyloxosulfonium triflate, provided 1-micron resolution
in a t-BOCST/HOST resist system at a 1% loading (by weight, with
respect to polymer).  The resist was exposed to 5-20 mJ at 248 nm and
developed in 0.21N TMAH.  These compounds were prepared in a
straightforward manner by treatment of the corresponding sulfonium
triflate with m-chloroperbenzoic acid in buffered bicarbonate
solution.

      The lithographic performance of the compounds was found to be
comparable to that of their corresponding sulfonium salts.  In a
standard acid-catalyzed, chemically-amplified resist system
consisting of an 18% (by weight) solution of a t-BOCST/HOST copolymer
in cyclohexanone which was approximately 4 mM in photoacid generator
(1% of total solids), 1-micron features could easily be resolved.