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Hollow Anode, Operated by Middle Frequency, as Etcher and CVD-Source

IP.com Disclosure Number: IPCOM000115487D
Original Publication Date: 1995-May-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Meyer, D: AUTHOR [+2]

Abstract

Disclosed is a hollow anode, operated by middle frequency and used as an etching apparatus and as a CVD source.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 67% of the total text.

Hollow Anode, Operated by Middle Frequency, as Etcher and CVD-Source

      Disclosed is a hollow anode, operated by middle frequency and
used as an etching apparatus and as a CVD source.

      RF-etchers are the common method of in-vacuo etching.  The
substrates are powered by RF in a known way.  The opposite electrode
or catcher plate thereby may be grounded.

      Known in literature but not widely distributed are
hollow-anodes as an etching apparatus.  In this case the
substrates/substrate-holder may be grounded.  The opposite electrode,
the anode, is powered by RF and the supply line is blocked for DC by
a capacitor.  The anode surface is larger than the surface of the
substrates/substrate-holder.  The anode is designed as an open box,
which is closed-off by the substrate-holder in such a way, that the
remaining gap between anode and substrate-holder is smaller than the
length of the dark-space at the given pressure-range.  Thus, the
discharge is confined to the inner of the anode and a positive bias
is developed at the anode.  The substrate-holder is negatively
charged in respect to the anode and will therefore be etched.  Hollow
anodes are usually operated at 13.56 MHz.  The  high capacity of the
anode requires skillful design and elaborated tuning networks.

      A hollow anode was designed and operated at 40 to 120 kHz and a
developed bias of about 800 V suitable for etching.  The output of
the middle-frequency generator was transforme...