Browse Prior Art Database

Metallic Seal for Tungsten Silicide Deposition Apparatus

IP.com Disclosure Number: IPCOM000115586D
Original Publication Date: 1995-May-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Pfitzner, R: AUTHOR

Abstract

Disclosed is a metallic seal for a tungsten silicide deposition apparatus using a LPCVD deposition process.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 95% of the total text.

Metallic Seal for Tungsten Silicide Deposition Apparatus

      Disclosed is a metallic seal for a tungsten silicide deposition
apparatus using a LPCVD deposition process.

      When depositing tungsten silicide (WSi) onto wafers using the
LPCVD process, WSi is also deposited onto the chuck as well as onto
the wafer support (clamp).  Accordingly, the clamp has to be changed
after a respective number of wafers has been coated.

      After having coated a certain number of wafers, the apparatus
has to be completely put out of operation for overhauling purposes.
In both cases the system has to be qualified again for production.
For this purpose, several "qualification wafers" are needed.

      Thus, the throughput of the system as well as the quality of
the product is reduced and the expenditure regarding maintenance of
the system is very high.

      The metallic seal described herein consists of an aluminium
foil that is put between the clamp and the chuck (Figure).  This foil
has a melting point of about 650ºC and becomes flexible at
this temperature.  Thereby the sealing effect occurs.  Thus the chuck
and the clamp is no longer coated with WSi.

      A further advantage of the described metallic seal is the fact
that WSi shows a good adhesion to the aluminium, therefore no
particles come off when the clamp is loosened.

      By the seal described herein the throughput of the system can
be increased by 25%, the quality of the product is...