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Integrated In-Situ Doped Polysilicon/Tungsten Silicide Gate Conductor

IP.com Disclosure Number: IPCOM000115662D
Original Publication Date: 1995-Jun-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Gow, TR: AUTHOR [+4]

Abstract

A process is described to form a two layer gate conductor comprised of doped polysilicon and tungsten silicide (WSix). This new process is performed within a single cluster tool which eliminates exposure to atmosphere between layer depositions and attendant oxidation and foriegn material exposures.

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Integrated In-Situ Doped Polysilicon/Tungsten Silicide Gate Conductor

      A process is described to form a two layer gate conductor
comprised of doped polysilicon and tungsten silicide (WSix).  This
new process is performed within a single cluster tool which
eliminates exposure to atmosphere between layer depositions and
attendant oxidation and foriegn material exposures.

      A commercially available chemical vapor deposition tool is used
to perform the two deposition steps.  First, polysilicon, doped with
phosphorous, is deposited.  Deposition parameters are selected for
optimum film conductivity and acceptable film stress.  Next, without
exposure to atmosphere, tungsten silicide is deposited.  The
deposition parameters are selected to start with silicon rich WSix,
where x>2, to avoid high stress and possible delamination at the
Si/WSix interface when annealing to form stoichiometric WSi2 is
performed.

      Either low pressure chemical deposition (LPCVD) or plasma
assisted chemical deposition (PECVD) processing can be used.

      This process results in high conductivity gate conductors with
higher yield, shorter process time, and lower capital cost (less
processing equipment) than was achieved with previous process
methods.