Browse Prior Art Database

High Performance Advanced Write-Once Optical Media

IP.com Disclosure Number: IPCOM000115826D
Original Publication Date: 1995-Jun-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Chen, M: AUTHOR [+5]

Abstract

The invented media consists of a thin film layer deposited on an optical disk substrate. The key feature of this invention is the use of a thin film layer which has an amorphous structure before writing. The amorphous film will have lower noise than the oven crystallized media commonly used in a standard ablative medium. Writing data is accomplished in a similar fashion to existing ablative write-once media, i.e. a focussed laser beam heats a localized region of the recording layer until it ablates by flow of molten active layer in a radial direction, forming a hole surrounded by a rim. This eases compatibility with existing media.

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High Performance Advanced Write-Once Optical Media

      The invented media consists of a thin film layer deposited on
an optical disk substrate.  The key feature of this invention is the
use of a thin film layer which has an amorphous structure before
writing.  The amorphous film will have lower noise than the oven
crystallized media commonly used in a standard ablative medium.
Writing data is accomplished in a similar fashion to existing
ablative write-once media, i.e. a focussed laser beam heats a
localized region of the recording layer until it ablates by flow of
molten active layer in a radial direction, forming a hole surrounded
by a rim.  This eases compatibility with existing media.

      Pseud-ternary Ga[x]Sb[100-x-y]Pb[y]  disks have been
systematically examined for performance with Nakamichi tester for the
composition range for 24 .le x .le 60 and 0 le y le 18.  The films of
GaSbPb were fabricated onto PC substrates by the Sloan vacuum system.
Dynamic testing was performed by suing Nakamichi tester (7.5m/s,
3T/8T, P[r]=0.6mW).  Two testers were used.  One at 830nm, 0.52NA was
used for read stability and CNR measurements.  The second, 780nm,
0.55NA was used for jitter, peak shift and FOM measurements.

      A Ga[37]Sb[55.5]Pb[7.5] disk exhibits a CNR of 59dB and 1.5
nsec jitter (leading edge-leading edge) at 3T, which should be
compared to 53dB and 2.1 nsec of an ablative standard ISO disk.  Such
high CNR was found for a composition range of...