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Browse Prior Art Database

Chemical Vapor Deposition of Copper/Tin Films

IP.com Disclosure Number: IPCOM000116020D
Original Publication Date: 1995-Jul-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Baum, TH: AUTHOR [+5]

Abstract

Single source, mixed metal complexes were synthesized and used to deposit copper films containing a small amount of a second metal. These complexes are useful for the deposition of copper alloy films and used to enhance the thermal, mechanical and electrical properties of copper films. The mixed metal complexes consisted of vinyl trialkyl tin derivatives of copper(I) hexafluoro-2,4-pentanedionates. The described materials were synthesized by known procedures, but were previously unknown materials and display enhanced thermal stability as neat liquids and in anaerobic solutions. The thermal decomposition of these complexes is highly temperature-dependant and results in thermal disproportionation of two copper(I) species to form a copper film, as well as decomposition of the tin containing Lewis base ligand.

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Chemical Vapor Deposition of Copper/Tin Films

      Single source, mixed metal complexes were synthesized and used
to deposit copper films containing a small amount of a second metal.
These complexes are useful for the deposition of copper alloy films
and used to enhance the thermal, mechanical and electrical properties
of copper films.  The mixed metal complexes consisted of vinyl
trialkyl tin derivatives of copper(I) hexafluoro-2,4-pentanedionates.
The described materials were synthesized by known procedures, but
were previously unknown materials and display enhanced thermal
stability as neat liquids and in anaerobic solutions.  The thermal
decomposition of these complexes is highly temperature-dependant and
results in thermal disproportionation of two copper(I) species to
form a copper film, as well as decomposition of the tin containing
Lewis base ligand.  At low substrate temperatures, clean Cu films
containing small amounts of Sn metal are deposited.  At high
substrate temperatures, the thermal decomposition of the Sn ligand
introduces carbon contaminants into the deposited film.  Thus,
elevated substrate temperatures are not preferred conditions for the
growth of clean Cu-Sn alloys.  Further, high substrate temperatures
may be undesirable for producing conformal step coverage over high
aspect-ratio vias on multi-level devices.