Browse Prior Art Database

Improved Membrane Stencil Mask

IP.com Disclosure Number: IPCOM000116139D
Original Publication Date: 1995-Aug-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 65K

Publishing Venue

IBM

Related People

Behringer, U: AUTHOR [+3]

Abstract

Disclosed are an improved membrane stencil mask and ways of fabricating it. The main application of this mask type is high throughput submicron lithography using ions or electrons.

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This is the abbreviated version, containing approximately 53% of the total text.

Improved Membrane Stencil Mask

      Disclosed are an improved membrane stencil mask and ways of
fabricating it.  The main application of this mask type is high
throughput submicron lithography using ions or electrons.

      Prior art masks have been fabricated by transferring the mask
pattern into a thin silicon membrane of a few micrometers.  For
stopping the electrons or ions of high energy in the opaque areas of
the membrane, the silicon membrane has been coated with a gold layer.
This gold layer enhances the heat transfer from the membrane and
avoids electrical charging of the membrane.  The thickness of the
gold layer has been adapted to the electron energy.  The use of gold
as an absorber material offered several advantages.  Gold may easily
be deposited by evaporating or sputtering without any strain and due
to the high atomic number thin layers of gold were sufficient.

      With increasing miniaturization and integration density the
semiconductor devices became more sensitive to all kinds of
contamination.  Gold may easily diffuse into silicon and, therefore,
today other absorber materials are preferred.  Potential candidates
are the refractory metals like tungsten, molybdenum etc. thin layers
of which, however, show high values of tensile and compressive
strain.

      To solve these problems it is proposed to provide an absorbing
layer of at least two different metals.  A gold layer is directly
deposited on the silicon membrane, prefera...