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Micro-Cleaving with Sub-Micron Precision using Focused Ion Beam Etching and a Special Micro-Cleaver

IP.com Disclosure Number: IPCOM000116230D
Original Publication Date: 1995-Aug-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 4 page(s) / 96K

Publishing Venue

IBM

Related People

Dietzel, A: AUTHOR [+2]

Abstract

Described is a micro-structuring technique which makes it possible to obtain high quality crystallographic micro-facets at any predetermined location with a positioning precision better than 0.1 &mu.m. This technique can be applied for example to (i) fabricate laser mirrors, in particular for short cavity lasers, with the possibility of cleaving, passivation, and other processing such as epitaxial growth in vacuum, (ii) produce crystallographic facets for failure analysis based on various microscopy techniques, including atomic resolution scanned probe microscopies in ultra-high vacuum.

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Micro-Cleaving with Sub-Micron Precision using Focused Ion Beam Etching
and a Special Micro-Cleaver

      Described is a micro-structuring technique which makes it
possible to obtain high quality crystallographic micro-facets at any
predetermined location with a positioning precision better than 0.1
&mu.m.  This technique can be applied for example to (i) fabricate
laser mirrors, in particular for short cavity lasers, with the
possibility of cleaving, passivation, and other processing such as
epitaxial growth in vacuum, (ii) produce crystallographic facets for
failure analysis based on various microscopy techniques, including
atomic resolution scanned probe microscopies in ultra-high vacuum.

      Cleaving is a necessary process to fabricate high quality
crystal facets.  In contrast to mechanically polished and chemically
or physically etched surfaces, cleaved surfaces are free of damage
and contamination and can be planar on atomic scale.  Besides
standard cleaving techniques in which the cleave position is defined
by mechanical scribing, micro-cleaving at positions determined by
lithography has been demonstrated to be useful to fabricate mirrors
of diode lasers (1,2).  The latter technique however, is limited to
large and planar surfaces and can be very complex depending on the
materials.  Examples illustrating the problem are the difficulties
with micro-cleaving of small devices, e.g., for failure analysis, and
high-precision cleaving of mirrors for short cavity lasers.

      Proposed is a new micro-cleaving technique, based on focused
ion beam etching and employing a novel micro-cleaver, which provides
a positioning precision better then 0.1 &mu.m.  In contrast to
earlier techniques used to cleave semiconductor structures, this
technique has practically no material, surface topography and device
size limitations.  Since cleaved surfaces are free of damage and
contamination and can be planar on atomic scale, the proposed
technique is applicable to fabricate reliable, in-situ passivated
laser diode mirrors and allows failure analysis of devices with
atomic resolution using Scanning Probe Microscopies (SPM).  In
addition, classical methods like EBIC, cathodolu...