Browse Prior Art Database

Thin Film Transistor Structure

IP.com Disclosure Number: IPCOM000116536D
Original Publication Date: 1995-Sep-01
Included in the Prior Art Database: 2005-Mar-30
Document File: 2 page(s) / 92K

Publishing Venue

IBM

Related People

Furuta, K: AUTHOR [+2]

Abstract

Disclosed is a Thin Film Transistor (TFT) structure that can be made with shorter process than the conventional one. With this structure, reverse twist of liquid crystal can be concealed because of the metal mask that is connected to Indium-Tin-Oxide (ITO) electrode. As this metal mask has no capacitive coupling with ITO and has very little coupling with data line, crosstalk due to capacitive coupling between ITO and data line does not occur.

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Thin Film Transistor Structure

      Disclosed is a Thin Film Transistor (TFT) structure that can be
made with shorter process than the conventional one.  With this
structure, reverse twist of liquid crystal can be concealed because
of the metal mask that is connected to Indium-Tin-Oxide (ITO)
electrode.  As this metal mask has no capacitive coupling with ITO
and has very little coupling with data line, crosstalk due to
capacitive coupling between ITO and data line does not occur.

      After depositing ITO on Glass substrate, molybdenum is
deposited by sputtering.  Then photoresist is coated and the area
except pixel, gate electrode, gate line and storage capacitor is
exposed and developed.  Dry etching is made, then resist is stripped
off (Fig. 1).

      After the deposition of gate insulator, amorphous silicon and
channel passivation layer with Chemical Vapor Deposition (CVD),
resist coat, exposure and development is made.  Then channel
passivation layer is etched with Buffered HF.  Resist is stripped off
(Fig. 2).

      CVD n+-amorphous silicon deposition is made, resist is coated,
exposure except pixel and contact pad is made and the resist is
developed.  Dry etching using CF4 is made and etching is stopped on
the gate electrode metal.  Resist is stripped off (Fig. 3).

      Molybdenum is deposited with sputtering method, resist is
coated, exposure except source electrode, drain electrode and data
line is made.  Wet etching using the mi...