Browse Prior Art Database

Gap Protection by using a Selective Reactive-Ion-Etching Method

IP.com Disclosure Number: IPCOM000116716D
Original Publication Date: 1995-Oct-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Hsiao, R: AUTHOR [+2]

Abstract

Disclosed is a method to prevent the sputtering erosion and/or chemical attack of the write gap during the processing of a magnetic recording head.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 85% of the total text.

Gap Protection by using a Selective Reactive-Ion-Etching Method

      Disclosed is a method to prevent the sputtering erosion and/or
chemical attack of the write gap during the processing of a magnetic
recording head.

      During the fabrication of the thin film inductive write head
for the MR read transducer, the first ferromagnetic element P1 is
commonly covered by a layer of  A1 sub 2 0 sub 3 which creates a
magnetic gap.  The thickness and the uniformity of the gap needs to
be controlled precisely.  Both of these, however, are affected during
the subsequent fabrication of electrical insulation layers and the Cu
coil.  The developing agent used in the photolithography process
attacks the  A1 sub 2 0 sub 3 chemically and the sputtering process,
used for cleaning and seedlayer removal, erodes the gap layer
preferentially at the corner of P1.

      The disclosed method uses a sacrificial SiO sub 2 layer that
can be selectively reactive-ion-etched later to protect the
functional
A1 sub 2 0 sub 3 gap from sputter erosion and/or chemical attack by
the developing agent.  This sacrificial layer is first deposited over
the functional A1 sub 2 0 sub 3 gap on P1.  During the insulation and
coil build process, the SiO sub 2 will not be attacked chemically by
the developing and the sputtering steps will only erode the SiO sub 2
layer but leave the underlying A1 sub 2 0 sub 3 layer intact.  Before
depositing the second pole piece, P2, over the gap, the SiO sub 2...