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Method of Anodic Oxidation

IP.com Disclosure Number: IPCOM000116863D
Original Publication Date: 1995-Nov-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 71K

Publishing Venue

IBM

Related People

Arai, T: AUTHOR [+2]

Abstract

Disclosed is a method for the anodic oxidation to get an insulator which has high uniformity, smooth surface and high break down voltage. In this method, low resistivity metals (such as Al or Al-alloy) are used as the anode, and a cathode is put on the side position or the back position of the substrate.

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Method of Anodic Oxidation

      Disclosed is a method for the anodic oxidation to get an
insulator which has high uniformity, smooth surface and high break
down voltage.  In this method, low resistivity metals (such as Al or
Al-alloy) are used as the anode, and a cathode is put on the side
position or the back position of the substrate.

      Figs. 1-a and 1-b show a conventional method.  A cathode is put
on the front position of the substrate.  In the case of high
resistivity metals, such as Ta, this method is used to make a good
uniformity.  However, low resistivity metals such as Al or Al alloy
enables to put the cathode on the side position (Fig. 2-a) or the
back position (Fig. 3-a).  The back position cathode provides high
uniformity, smooth surface and high break down voltage, even in the
electrolyte of ethylene glycol concentrated lower than 50% (Fig. 4).
The side position cathode provides the same tendency.

      On the math production, the side position type (Fig. 2-b)
requires less space.  In addition, the back position type needs cover
sheets in front of every substrates (Fig. 3-b).