Browse Prior Art Database

Method for Anodic Oxidation

IP.com Disclosure Number: IPCOM000116891D
Original Publication Date: 1995-Nov-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Arai, T: AUTHOR [+2]

Abstract

Disclosed is a technique for anodic oxidation in manufacturing Thin Film Transistors (TFTs), with anodic oxide films as gate insulators. The advantage of the invention is the enlargement of the available area for TFT fabrication on the substrate by reducing the margin area of anodic oxidation. This technique is suitable for large diagonal size TFT-LCDs.

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This is the abbreviated version, containing approximately 100% of the total text.

Method for Anodic Oxidation

      Disclosed is a technique for anodic oxidation in manufacturing
Thin Film Transistors (TFTs), with  anodic oxide films as gate
insulators.  The advantage of the invention is the enlargement of the
available area for TFT fabrication on the substrate by reducing the
margin area of anodic oxidation.  This technique is suitable for
large diagonal size TFT-LCDs.

      A part of the substrate must be out of the electrolyte in order
to apply DC voltage to the electrode which is connected with the gate
lines.  While a rather large area about 20mm in width is not anodized
in case of that the substrate is soaked in the electrolyte
horizontally.  The non-anodized area can be reduced by soaking the
substrate in the electrolyte with only one corner out of the
electrolyte.

      The object and features of the invention may be understood with
reference to the following detailed description of an illustrated
embodiment of the invention, taken together with the accompanying
drawings, in which Fig. 1 illustrates a schematic front view of the
conventional method for anodic oxidation.  Fig. 2 is a view similar
to that of Fig. 1, illustrates partially enlarged.  Fig. 3 shows a
preferred embodiment of the invention.  Fig. 4 is a view similar to
that of Fig. 3, illustrates partially enlarged.