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Browse Prior Art Database

Arcing Preventive Method for Collimated Sputtering System

IP.com Disclosure Number: IPCOM000116982D
Original Publication Date: 1995-Dec-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Katayama, M: AUTHOR [+3]

Abstract

Disclosed is an Arcing Preventive Method for the collimated sputtering system. The collimated sputtering system is an advanced metal deposition system for the semiconductor and the liquid crystal display fabrication. The combination of the sputtering target with a gap and the process chamber wall (or the chamber shield with a projection) prevents arcing, between the sputtering target and the process chamber wall, which generates particles and causes defects on a product.

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Arcing Preventive Method for Collimated Sputtering System

      Disclosed is an Arcing Preventive Method for the collimated
sputtering system.  The collimated sputtering system is an advanced
metal deposition system for the semiconductor and the liquid crystal
display fabrication.  The combination of the sputtering target with a
gap and the process chamber wall (or the chamber shield with a
projection) prevents arcing, between the sputtering target and the
process chamber wall, which generates particles and causes defects on
a product.

      The collimated sputtering deposition requires a full flat
erosion of the sputtering target to navel better film thickness
uniformity with a small process chamber and a small sputtering
target.  The Figure shows the example of the full flat erosion type.
The combination of the gap on the sputtering target (1) and the
projection of the chamber wall (or the shield) (2) protects the metal
deposition on the insulator (3) between the chamber wall and
sputtering target.  This system realizes the flat type target (4) and
the minimal process chamber.

      This combination of the target and shield is available for the
conductor material etching system such as an ion beam etching, RF
sputter
etching, etc.