Browse Prior Art Database

Mask Off-Set Double Exposure for Color Filter Nega-Resist

IP.com Disclosure Number: IPCOM000117197D
Original Publication Date: 1996-Jan-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Kimura, S: AUTHOR [+2]

Abstract

Disclosed is a method of double exposure for Liquid Crystal Display (LCD) Color Filter photo process. This method could reduce the possibility of having defective pattern or surface disorder due to exposing failures caused by contaminants (foreign materials) which reside on the Photo Mask or between the Mask and Glass Substrate. The disclosed method is to apply the photo exposure process twice, the second time of which is using the same Mask as the first one, but slightly dislocated from the original location, to the direction along with the Color Filter stripes.

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Mask Off-Set Double Exposure for Color Filter Nega-Resist

      Disclosed is a method of double exposure for Liquid Crystal
Display (LCD) Color Filter photo process.  This method could reduce
the possibility of having defective pattern or surface disorder due
to exposing failures caused by contaminants (foreign materials) which
reside on the Photo Mask or between the Mask and Glass Substrate.
The disclosed method is to apply the photo exposure process twice,
the second time of which is using the same Mask as the first one, but
slightly dislocated from the original location, to the direction
along with the Color Filter stripes.

      Conventional Process - In the conventional photolithography
method at Color Filter process, to minimize the defective patterns or
surface disorders (due to exposing failures) is an essential
requirement.  However, to nullify the contaminants or foreign
materials was extremely hard when its aerial dimension is far larger
than semiconductor wafer's.  To solve this problem, sometimes the
method of "double exposure" has been applied, which is to apply
exposing process twice, the second time of which uses a new mask
with the identical pattern to the first one, to make sure that the
unexposed spots caused by contaminants or foreign materials on the
first mask are successfully exposed in the second exposing process.
In those cases, improvement was confirmed in the pattern and surface
quality, however, disadvantage of this method, the impact...