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Method for Repairing a Short Defect after the Forming Process of a Passivation Layer

IP.com Disclosure Number: IPCOM000117379D
Original Publication Date: 1996-Feb-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 136K

Publishing Venue

IBM

Related People

Kinoshita, H: AUTHOR

Abstract

Disclosed is a method for repairing a short defect between signal lines of the Thin Film Transistor/Liquid Crystal Display (TFT/LCD). The feature is a shape of the passivation layer formed on the signal lines.

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Method for Repairing a Short Defect after the Forming Process of
a Passivation Layer

      Disclosed is a method for repairing a short defect between
signal lines of the Thin Film Transistor/Liquid Crystal Display
(TFT/LCD).  The feature is a shape of the passivation layer formed on
the signal lines.

      Fig. 1 shows a conventional passivation layer.  It is very
difficult to repair the defect between signal lines after the forming
process of the passivation layer because the defect is covered by the
passivation layer.

      Figs. 2 and 3 show the new shape of the passivation layer.  The
passivation layers are separated in every signal lines and have slits
between the signal lines.  According to the method, even if the short
defect between the signal lines is formed in the forming process of
the signal lines (Fig. 2), the defect is etched by using the slit of
the passivation layer as a mask (Fig. 3).