Browse Prior Art Database

Magneto Resistive-Sensor Protection on Wafer Level

IP.com Disclosure Number: IPCOM000117386D
Original Publication Date: 1996-Feb-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Kiefer, E: AUTHOR [+2]

Abstract

Magnetoresistive (MR) elements for readelements in DASD technology are very sensitive to electrostatic damage (ESD). Especially during manufacturing on wafer level there is no housing to protect them.

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Magneto Resistive-Sensor Protection on Wafer Level

      Magnetoresistive (MR) elements for readelements in DASD
technology are very sensitive to electrostatic damage (ESD).
Especially during manufacturing on wafer level there is no housing to
protect them.

      A simple additional connecting line will shortcut the MR-sensor
stripe and prevent any current to flow through the sensor.  This
connecting line may be manufactured in one process step together with
the connecting line from the I/O pads to the MR strip.  If this
shortcut is designed and performed on the area of the cutting kerf,
it will be automatically removed during cutting the wafer into single
devices.