Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Black Matrix Film of Liquid Crystal Display

IP.com Disclosure Number: IPCOM000117398D
Original Publication Date: 1996-Feb-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 115K

Publishing Venue

IBM

Related People

Kato, Y: AUTHOR

Abstract

Disclosed is a device for Liquid Crystal Displays (LCDs). The device contains hydrogenated amorphous silicon germanium carbon (a-SiGeC: H) thin film as a Black Matrix (BM). The a-SiGeC: H thin film has high resistivity and absorbs visible light which can work as black matrix for LCDs. The a-SiGeC: H film contains 25-50% of Si, 25-50% of Ge, 1-25% of C, and 9-30% of H with resistivity of more than 5x10e10 ohm-cm. The thickness of the film is less than 1 um. By depositing passivation layer and this BM layer successively on Thin Film Transistor (TFT) array, it is not necessary to have additional photolithography and etching processes.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 64% of the total text.

Black Matrix Film of Liquid Crystal Display

      Disclosed is a device for Liquid Crystal Displays (LCDs).  The
device contains hydrogenated amorphous silicon germanium carbon
(a-SiGeC: H) thin film as a Black Matrix (BM).  The a-SiGeC: H thin
film has high resistivity and absorbs visible light which can work as
black matrix for LCDs.  The a-SiGeC: H film contains 25-50% of Si,
25-50% of Ge, 1-25% of C, and 9-30% of H with resistivity of more
than 5x10e10 ohm-cm.  The thickness of the film is less than 1 um.
By depositing passivation layer and this BM layer successively on
Thin Film Transistor (TFT) array, it is not necessary to have
additional photolithography and etching processes.

      Figs. 1 and 2 show the a-SiGe: H or a-SiGeC: H BM thin film
deposited on the top of the bottom gate type TFT and data line with
the pixel electrode edges on glass substrates, respectively.  When
the resistivity of BM layer is high enough, it is not necessary to
use SiNx passivation layer.  The a-SiGe: H and a-SiGeC: H thin film
was deposited by using mosaic or hot-pressed SiGe and SiGeC targets,
respectively.  During the deposition, substrate temperature was
varied from room temperature to 250 C, pressure was 0.1 - 0.3 Pa, and
the Ar: H gas flow ratio was 2:1 - 1:10.  Dry etching of the BM layer
and SiNx passivation layer is done at the same time using CF4, SF6
and O2 gases.

      When the BM resistivity is not high enough, current leak from
the pixel occurs while h...